A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
1269-1274 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.1269 |
| Citation |
Junji Senzaki et al., 2004, Materials Science Forum, 457-460, 1269 |
| Online since |
June, 2004 |
| Authors |
Junji Senzaki, M. Goto, Kazutoshi Kojima, Kikuo Yamabe, Kenji Fukuda |
| Keywords |
4H-SiC, Dielectric Breakdown, Metal Impurity, MOS Reliability, Surface Morphology, Thermal Oxide |
| Full Paper |
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