Paper Title:
A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1269-1274
DOI
10.4028/www.scientific.net/MSF.457-460.1269
Citation
J. Senzaki, M. Goto, K. Kojima, K. Yamabe, K. Fukuda, "A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer", Materials Science Forum, Vols. 457-460, pp. 1269-1274, 2004
Online since
June 2004
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