Paper Title:
Recent Advances in (0001) 4H-SiC MOS Device Technology
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1275-1280
DOI
10.4028/www.scientific.net/MSF.457-460.1275
Citation
M. K. Das, "Recent Advances in (0001) 4H-SiC MOS Device Technology", Materials Science Forum, Vols. 457-460, pp. 1275-1280, 2004
Online since
June 2004
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