Paper Title:
Characterizations of SiC/SiO2 Interface Quality Toward High Power MOSFETs Realization
| Periodical |
Materials Science Forum (Volumes 457 - 460)
|
| Main Theme |
Silicon Carbide and Related Materials 2003
|
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
1281-1286 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.1281 |
| Citation |
D. Ziane et al., 2004, Materials Science Forum, 457-460, 1281 |
| Online since |
June, 2004 |
| Authors |
D. Ziane, Jean Marie Bluet, Gérard Guillot, Phillippe Godignon, Josep Montserrat, R.R Ciechonski, Mikael Syväjärvi, Rositza Yakimova, L. Chen, Philip A. Mawby |
| Keywords |
C-V, G-V, Interface States (or Traps), MOS, Sublimation Epitaxy |
| Price |
US$ 28,- |