Paper Title:
Characterizations of SiC/SiO2 Interface Quality Toward High Power MOSFETs Realization
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1281-1286
DOI
10.4028/www.scientific.net/MSF.457-460.1281
Citation
D. Ziane, J. M. Bluet, G. Guillot, P. Godignon, J. Montserrat, R.R. Ciechonski, M. Syväjärvi, R. Yakimova, L. Chen, P. A. Mawby, "Characterizations of SiC/SiO2 Interface Quality Toward High Power MOSFETs Realization ", Materials Science Forum, Vols. 457-460, pp. 1281-1286, 2004
Online since
June 2004
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$32.00
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