Paper Title:

Characterizations of SiC/SiO2 Interface Quality Toward High Power MOSFETs Realization

Periodical Materials Science Forum (Volumes 457 - 460)
Main Theme Silicon Carbide and Related Materials 2003
Edited by Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages 1281-1286
DOI 10.4028/www.scientific.net/MSF.457-460.1281
Citation D. Ziane et al., 2004, Materials Science Forum, 457-460, 1281
Online since June, 2004
Authors D. Ziane, Jean Marie Bluet, Gérard Guillot, Phillippe Godignon, Josep Montserrat, R.R Ciechonski, Mikael Syväjärvi, Rositza Yakimova, L. Chen, Philip A. Mawby
Keywords C-V, G-V, Interface States (or Traps), MOS, Sublimation Epitaxy
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