Paper Title:
Hall Effect Measurements in SiC Buried-Channel MOS Devices
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1287-1292
DOI
10.4028/www.scientific.net/MSF.457-460.1287
Citation
N.S. Saks, S. H. Ryu, "Hall Effect Measurements in SiC Buried-Channel MOS Devices", Materials Science Forum, Vols. 457-460, pp. 1287-1292, 2004
Online since
June 2004
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Price
$35.00
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