Paper Title:
Interface States in Abrupt SiO2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1297-1300
DOI
10.4028/www.scientific.net/MSF.457-460.1297
Citation
T. Ohnuma, H. Tsuchida, T. Jikimoto, "Interface States in Abrupt SiO2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters ", Materials Science Forum, Vols. 457-460, pp. 1297-1300, 2004
Online since
June 2004
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