Investigation of SiO2/SiC Interface using Positron Annihilation Technique |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
1301-1304 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.1301 |
| Citation |
Masaki Maekawa et al., 2004, Materials Science Forum, 457-460, 1301 |
| Online since |
June, 2004 |
| Authors |
Masaki Maekawa, Atsuo Kawasuso, Masahito Yoshikawa, Ayahiko Ichimiya |
| Keywords |
Doppler-Shift, MOS Structure, Open-Volume Defect, Positron Beam, SiO2/SiC Interface |
| Full Paper |
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