Paper Title:
Investigation of SiO2/SiC Interface using Positron Annihilation Technique
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1301-1304
DOI
10.4028/www.scientific.net/MSF.457-460.1301
Citation
M. Maekawa, A. Kawasuso, M. Yoshikawa, A. Ichimiya, "Investigation of SiO2/SiC Interface using Positron Annihilation Technique", Materials Science Forum, Vols. 457-460, pp. 1301-1304, 2004
Online since
June 2004
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$32.00
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