Paper Title:
Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1309-1312
DOI
10.4028/www.scientific.net/MSF.457-460.1309
Citation
W. Wang, S. Banerjee, T. P. Chow, R. J. Gutmann, T. Isaacs-Smith, J. R. Williams, K. A. Jones, A. J. Lelis, W. Tipton, S. Scozzie, A. K. Agarwal, "Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2", Materials Science Forum, Vols. 457-460, pp. 1309-1312, 2004
Online since
June 2004
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