Paper Title:
Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1317-1320
DOI
10.4028/www.scientific.net/MSF.457-460.1317
Citation
T. Seyller, K. V. Emtsev, R. Graupner, L. Ley, "Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy", Materials Science Forum, Vols. 457-460, pp. 1317-1320, 2004
Online since
June 2004
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