Paper Title:
Thermal Oxidation of 4H-Silicon Using the Afterglow Method
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1349-1352
DOI
10.4028/www.scientific.net/MSF.457-460.1349
Citation
A.M. Hoff, E. Oborina, S. E. Saddow, A. Savtchouk, "Thermal Oxidation of 4H-Silicon Using the Afterglow Method", Materials Science Forum, Vols. 457-460, pp. 1349-1352, 2004
Online since
June 2004
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Authors: D.P. Ettisserry, Neil Goldsman, Akin Akturk, Aivars J. Lelis
2.3 Surfaces and Interfaces
Abstract:In this work, we investigate the behavior of Nitrogen atoms at 4H-Silicon Carbide (4H-SiC)/Silicon dioxide (SiO2) interface during...
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