Paper Title:
Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001)
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1361-1364
DOI
10.4028/www.scientific.net/MSF.457-460.1361
Citation
V. V. Afanas'ev, S.A. Campbell, K.Y. Cheong, F. Ciobanu, S. Dimitrijev, G. Pensl, A. Stesmans, L. Zhong, "Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001)", Materials Science Forum, Vols. 457-460, pp. 1361-1364, 2004
Online since
June 2004
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