Paper Title:
Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1365-1368
DOI
10.4028/www.scientific.net/MSF.457-460.1365
Citation
K.Y. Cheong, S. Dimitrijev, J. S. Han, "Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC", Materials Science Forum, Vols. 457-460, pp. 1365-1368, 2004
Online since
June 2004
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