Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
1381-1384 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.1381 |
| Citation |
Michael Laube et al., 2004, Materials Science Forum, 457-460, 1381 |
| Online since |
June, 2004 |
| Authors |
Michael Laube, Gerhard Pensl, Kin Kiong Lee, Takeshi Ohshima |
| Keywords |
6H-SiC MOSFET, Hall-Effect, Inversion, Percolation |
| Full Paper |
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