Paper Title:
Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1381-1384
DOI
10.4028/www.scientific.net/MSF.457-460.1381
Citation
M. Laube, G. Pensl, K. K. Lee, T. Ohshima, "Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect ", Materials Science Forum, Vols. 457-460, pp. 1381-1384, 2004
Online since
June 2004
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