Paper Title:
Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1397-1400
DOI
10.4028/www.scientific.net/MSF.457-460.1397
Citation
R. Kosugi, N. Kiritani, K. Suzuki, T. Yatsuo, K. Adachi, K. Fukuda, "Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing", Materials Science Forum, Vols. 457-460, pp. 1397-1400, 2004
Online since
June 2004
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