Paper Title:
A P-Channel MOSFET on 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1401-1404
DOI
10.4028/www.scientific.net/MSF.457-460.1401
Citation
J. S. Han, K.Y. Cheong, S. Dimitrijev, M. Laube, G. Pensl, "A P-Channel MOSFET on 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 1401-1404, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Y. Kanzaki, H. Kinbara, Hajime Kosugi, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami
1429
Authors: Eiichi Okuno, Takeshi Endo, Hideo Matsuki, Toshio Sakakibara, Hiroaki Tanaka
Abstract:In our previous paper [1], we simulated an accumulation-mode MOSFET with an epitaxial layer channel (epi-channel) that had a high channel...
817
Authors: Masato Noborio, Y. Kanzaki, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami
Abstract:Short-channel effects in SiC MOSFETs have been investigated. Planar MOSFETs with various channel lengths have been fabricated on p-type...
821
Authors: Mitsuo Okamoto, Mieko Tanaka, Tsutomu Yatsuo, Kenji Fukuda
Abstract:It is of great importance to investigate the electrical properties of SiC p-channel MOSFETs for development of SiC CMOS technology. In the...
783
Authors: Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:From a viewpoint of device application using p-channel SiC MOSFETs, control of their channel properties is of great importance. We aimed to...
711