Paper Title:
Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1405-1408
DOI
10.4028/www.scientific.net/MSF.457-460.1405
Citation
T. Ohshima, K. K. Lee, Y. Ishida, Y. Tanaka, K. Kojima, T. Takahashi, M. Yoshikawa, H. Okumura, K. Arai, T. Kamiya, "Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC", Materials Science Forum, Vols. 457-460, pp. 1405-1408, 2004
Online since
June 2004
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