Paper Title:
4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1409-1412
DOI
10.4028/www.scientific.net/MSF.457-460.1409
Citation
J. Kaido, T. Kimoto, J. Suda, H. Matsunami, "4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)", Materials Science Forum, Vols. 457-460, pp. 1409-1412, 2004
Online since
June 2004
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