Paper Title:
930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1413-1416
DOI
10.4028/www.scientific.net/MSF.457-460.1413
Citation
W. Wang, S. Banerjee, T. P. Chow, R. J. Gutmann, "930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing", Materials Science Forum, Vols. 457-460, pp. 1413-1416, 2004
Online since
June 2004
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