4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm2/Vs |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
1417-1420 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.1417 |
| Citation |
Kenji Fukuda et al., 2004, Materials Science Forum, 457-460, 1417 |
| Online since |
June, 2004 |
| Authors |
Kenji Fukuda, Makoto Kato, Junji Senzaki, Kazutoshi Kojima, Takaya Suzuki |
| Keywords |
Carbon Face, Interface States (or Traps), Inversion Channel Mobility, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Silicon Carbide (SiC) |
| Full Paper |
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