Paper Title:
4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm2/Vs
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1417-1420
DOI
10.4028/www.scientific.net/MSF.457-460.1417
Citation
K. Fukuda, M. Kato, J. Senzaki, K. Kojima, T. Suzuki, "4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm2/Vs", Materials Science Forum, Vols. 457-460, pp. 1417-1420, 2004
Online since
June 2004
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