Paper Title:
Fabrication of 4H-SiC Double-Epitaxial MOSFETs
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1421-1424
DOI
10.4028/www.scientific.net/MSF.457-460.1421
Citation
S. Harada, M. Okamoto, T. Yatsuo, K. Adachi, K. Suzuki, S. Suzuki, K. Fukuda, K. Arai, "Fabrication of 4H-SiC Double-Epitaxial MOSFETs", Materials Science Forum, Vols. 457-460, pp. 1421-1424, 2004
Online since
June 2004
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Price
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