Paper Title:
Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N2O)
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1425-1428
DOI
10.4028/www.scientific.net/MSF.457-460.1425
Citation
G. Gudjónsson, H.Ö. Ólafsson, E. Ö. Sveinbjörnsson, "Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N2O)", Materials Science Forum, Vols. 457-460, pp. 1425-1428, 2004
Online since
June 2004
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