Paper Title:
High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1429-1432
DOI
10.4028/www.scientific.net/MSF.457-460.1429
Citation
Y. Kanzaki, H. Kinbara, H. Kosugi, J. Suda, T. Kimoto, H. Matsunami, "High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient ", Materials Science Forum, Vols. 457-460, pp. 1429-1432, 2004
Online since
June 2004
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