Paper Title:
Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs
| Periodical |
Materials Science Forum (Volumes 457 - 460)
|
| Main Theme |
Silicon Carbide and Related Materials 2003
|
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
1433-1436 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.1433 |
| Citation |
Nicolas G. Wright et al., 2004, Materials Science Forum, 457-460, 1433 |
| Online since |
June, 2004 |
| Authors |
Nicolas G. Wright, N. Poolamai, Konstantin Vassilevski, Alton B. Horsfall, C. Mark Johnson |
| Keywords |
High-k Dielectrics, SiC Device |
| Price |
US$ 28,- |