Paper Title:

Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs

Periodical Materials Science Forum (Volumes 457 - 460)
Main Theme Silicon Carbide and Related Materials 2003
Edited by Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages 1433-1436
DOI 10.4028/www.scientific.net/MSF.457-460.1433
Citation Nicolas G. Wright et al., 2004, Materials Science Forum, 457-460, 1433
Online since June, 2004
Authors Nicolas G. Wright, N. Poolamai, Konstantin Vassilevski, Alton B. Horsfall, C. Mark Johnson
Keywords High-k Dielectrics, SiC Device
Price US$ 28,-
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