Paper Title:
Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1437-1440
DOI
10.4028/www.scientific.net/MSF.457-460.1437
Citation
H. S. Lee, S.-M. Koo, C. M. Zetterling, E. Danielsson, M. Domeij, M. Östling, "Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K", Materials Science Forum, Vols. 457-460, pp. 1437-1440, 2004
Online since
June 2004
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