Paper Title:
Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1457-1462
DOI
10.4028/www.scientific.net/MSF.457-460.1457
Citation
H. J. von Bardeleben, J.L. Cantin, Y. Shishkin, R. P. Devaty, W. J. Choyke, "Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC ", Materials Science Forum, Vols. 457-460, pp. 1457-1462, 2004
Online since
June 2004
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