Paper Title:
Triangular Pore Formation in Highly Doped n-Type 4H SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1467-1470
DOI
10.4028/www.scientific.net/MSF.457-460.1467
Citation
Y. Shishkin, W. J. Choyke, R. P. Devaty, "Triangular Pore Formation in Highly Doped n-Type 4H SiC ", Materials Science Forum, Vols. 457-460, pp. 1467-1470, 2004
Online since
June 2004
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