Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors |
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| Journal | Materials Science Forum (Volumes 457 - 460) |
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| Volume | Silicon Carbide and Related Materials 2003 |
| Edited by | Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages | 15-20 |
| DOI | 10.4028/www.scientific.net/MSF.457-460.15 |
| Online since | June, 2004 |
| Authors | Chris G. Van de Walle |
| Keywords | Compensation, Doping, First Principles Calculation, Impurities, Point Defect |
| Full Paper | 
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