Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
15-20 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.15 |
| Citation |
Chris G. Van de Walle, 2004, Materials Science Forum, 457-460, 15 |
| Online since |
June, 2004 |
| Authors |
Chris G. Van de Walle |
| Keywords |
Compensation, Doping, First-Principles Calculations, Impurities, Point Defect |
| Full Paper |
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