Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate Electrode |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
1507-1510 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.1507 |
| Citation |
Shinji Nakagomi et al., 2004, Materials Science Forum, 457-460, 1507 |
| Online since |
June, 2004 |
| Authors |
Shinji Nakagomi, M. Takahashi, Y. Kokubun, Lars Unéus, Susan Savage, H. Wingbrant, Mike Andersson, Ingemar Lundström, M. Löfdahl, Anita Lloyd Spetz |
| Keywords |
Buried Channel, Catalytic Gate, Gas Sensor, High Temperature, JFET, SIT, Substrate Bias |
| Full Paper |
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