Paper Title:
Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate Electrode
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1507-1510
DOI
10.4028/www.scientific.net/MSF.457-460.1507
Citation
S. Nakagomi, M. Takahashi, Y. Kokubun, L. Unéus, S. Savage, H. Wingbrant, M. Andersson, I. Lundström, M. Löfdahl, A. Lloyd Spetz, "Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate Electrode ", Materials Science Forum, Vols. 457-460, pp. 1507-1510, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Reza Ghandi, Mikael Östling, Fredrik Allerstam, Einar Ö. Sveinbjörnsson
Abstract:This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BVCEO) of 1200 V, a maximum current gain (β) of 60...
1151
Authors: N. Mohankumar, A. Mohanbabu, S. Baskaran, P. Anandan, N. Anbuselvan, P. Bharathi Vikkiraman
Chapter 2: Intelligent and Electronic Materials, Magnetic Materials
Abstract:In this paper, we propose a physics-based analytical model of novel InAlN/GaN High Electron Mobility Transistor (HEMT) by considering the...
99
Authors: Pavel Florian, Jan Pospisil, Oldrich Zmeskal
Chapter 4: Materials and Technologies for Organic Electronics
Abstract:The source-drain current-voltage characteristic is linear and symmetric at low voltages.The linearity and symmetry can be influenced by the...
179