Paper Title:
Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1511-1514
DOI
10.4028/www.scientific.net/MSF.457-460.1511
Citation
R. L. Myers-Ward, S. E. Saddow, S. P. Rao, K. D. Hobart, M. Fatemi, F. J. Kub, "Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates ", Materials Science Forum, Vols. 457-460, pp. 1511-1514, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Kazuki Takahashi, Kanji Yasui, Maki Suemitsu, Ariyuki Kato, Yuichiro Kuroki, Masasuke Takata, Tadashi Akahane
Abstract:Gallium nitride (GaN) films were grown on SiC/Si(111) substrates by hot-mesh chemical vapor deposition (CVD) using trimethylgallium (TMG)...
261
Authors: Emil Tymicki, Krzysztof Grasza, Katarzyna Racka, Marcin Raczkiewicz, Tadeusz Łukasiewicz, Maciej Gała, Kinga Kościewicz, Ryszard Diduszko, Rafał Bożek
Abstract:4H-SiC single crystals grown by the seeded physical vapour transport method have been investigated. These crystals were grown on 6H-SiC...
15
Authors: Wlodek Strupiński, Rafał Bożek, Jolanta Borysiuk, Kinga Kościewicz, Andrzej Wysmolek, Roman Stepniewski, Jacek M. Baranowski
Abstract:The so-called “growth” of graphene was performed using a horizontal chemical vapor deposition (CVD) hot-wall reactor. In-situ etching in the...
199
Authors: Yin Bo Wang, Sheng Meng, Qian Dai, Zhang Yan, Qing Rong Feng
Chapter 2: Materials Engineering and Production Technologies
Abstract:We have fabricated MgB2 thick films on SiC substrates growing along c axis by using hybrid physical–chemical vapor deposition (HPCVD)...
153
Authors: Michael R. Jennings, Amador Pérez-Tomás, Andrea Severino, Peter Ward, Arif Bashir, Craig Fisher, Stephen M. Thomas, Peter M. Gammon, Benedict T. Donnellan, Hua Rong, D.P. Hamilton, Philip A. Mawby
Chapter 4: Epitaxial Growth 3C SiC
Abstract:In this paper, we report on a novel direct wafer bonding technique; Si (111) wafers to polycrystalline silicon carbide carrier wafers. The...
271