Paper Title:
X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH3
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1549-1552
DOI
10.4028/www.scientific.net/MSF.457-460.1549
Citation
L. YingShen, S. Hashimoto, K. Abe, R. Hayashibe, T. Yamagami, M. Nakao, K. Kamimura, "X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH3", Materials Science Forum, Vols. 457-460, pp. 1549-1552, 2004
Online since
June 2004
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