Paper Title:
Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1569-1572
DOI
10.4028/www.scientific.net/MSF.457-460.1569
Citation
N. Onojima, J. Kaido, J. Suda, T. Kimoto, H. Matsunami, "Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy ", Materials Science Forum, Vols. 457-460, pp. 1569-1572, 2004
Online since
June 2004
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