Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
1569-1572 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.1569 |
| Citation |
Norio Onojima et al., 2004, Materials Science Forum, 457-460, 1569 |
| Online since |
June, 2004 |
| Authors |
Norio Onojima, J. Kaido, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami |
| Keywords |
Aluminium Nitride (AlN), Interface States (or Traps), MIS, Molecular-Beam Epitaxy MBE, Silicon Carbide (SiC) |
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