Paper Title:
Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
157-162
DOI
10.4028/www.scientific.net/MSF.457-460.157
Citation
X. Huang, M. Dudley, W. Cho, R. S. Okojie, P. G. Neudeck, "Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques", Materials Science Forum, Vols. 457-460, pp. 157-162, 2004
Online since
June 2004
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