Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
157-162 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.157 |
| Citation |
X. Huang et al., 2004, Materials Science Forum, 457-460, 157 |
| Online since |
June, 2004 |
| Authors |
X. Huang, Michael Dudley, W. Cho, Robert S. Okojie, Philip G. Neudeck |
| Keywords |
Characterization, High Resolution X-Ray Diffraction (HRXRD), Reciprocal Space Mapping (RSM), SiC Epitaxial Structure |
| Full Paper |
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