Paper Title:
Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1577-1580
DOI
10.4028/www.scientific.net/MSF.457-460.1577
Citation
F. Fossard, J. Brault, N. Gogneau, E. Monroy, F. Enjalbert, L. S. Dang, E. Bellet-Amalric, S. Monnoye, B. Daudin, H. Mank, "Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates ", Materials Science Forum, Vols. 457-460, pp. 1577-1580, 2004
Online since
June 2004
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