Paper Title:
GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1581-1584
DOI
10.4028/www.scientific.net/MSF.457-460.1581
Citation
J. Napierala, D.M. Martin, H.-J. Bühlmann, S. Gradecak, M. Ilegems, "GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy", Materials Science Forum, Vols. 457-460, pp. 1581-1584, 2004
Online since
June 2004
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