Paper Title:
Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1597-1600
DOI
10.4028/www.scientific.net/MSF.457-460.1597
Citation
J. K. Jeong, H. K. Song, M. Y. Um, H. J. Kim, H.-C. Seo, H. J. Kim , E. Yoon, C. S. Hwang, H. J. Kim, "Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition", Materials Science Forum, Vols. 457-460, pp. 1597-1600, 2004
Online since
June 2004
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