Paper Title:
Radiotracer Spectroscopy on Group II Acceptors in GaN
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1609-1612
DOI
10.4028/www.scientific.net/MSF.457-460.1609
Citation
F. Albrecht, G. Pasold, J. Grillenberger, U. Reislöhner, M. Dietrich, W. Witthuhn, Isolde Collaboration, "Radiotracer Spectroscopy on Group II Acceptors in GaN", Materials Science Forum, Vols. 457-460, pp. 1609-1612, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Hee Chang Jeon, Chan Jin Park, Hoon Young Cho, Tae Won Kang, Tae Whan Kim, Jae Eung Oh
Abstract:Capacitance-voltage (C-V) and Deep-level transient spectroscopy (DLTS) measurements on AlxGa1-xN/GaN heterostructures were performed to...
89
Authors: Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte, Lucia Romano, Maria Grazia Grimaldi, Vito Raineri
491
Authors: Yutaka Tokuda, Youichi Matsuoka, Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi
Abstract:Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two...
1297
Authors: Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Giuseppe Moschetti, Corrado Bongiorno, Salvatore Di Franco, Valeria Puglisi, Giuseppe Abbondanza, Vito Raineri
Abstract:Gallium nitride (GaN) and related alloys (AlxGa1-xN) are promising semiconductors for high-frequency and high-power devices applications. In...
967
Authors: Nicolas Thierry-Jebali, Olivier Ménard, Christiane Dubois, Dominique Tournier, Emmanuel Collard, Christian Brylinski, Frédéric Cayrel, Daniel Alquier
Chapter 5: GaN: Devices and Material
Abstract:This work reports of investigation on the origin of the ohmic behavior for Ti/Al basedcontacts on n-GaN. Indeed, last publications tend to...
208