Paper Title:
Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1613-1616
DOI
10.4028/www.scientific.net/MSF.457-460.1613
Citation
B.J. Skromme, L. Chen, M.K. Mikhov, H. Yamane, M. Aoki, F.J. DiSalvo, "Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults", Materials Science Forum, Vols. 457-460, pp. 1613-1616, 2004
Online since
June 2004
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