Paper Title:

Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults

Periodical Materials Science Forum (Volumes 457 - 460)
Main Theme Silicon Carbide and Related Materials 2003
Edited by Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages 1613-1616
DOI 10.4028/www.scientific.net/MSF.457-460.1613
Citation B.J. Skromme et al., 2004, Materials Science Forum, 457-460, 1613
Online since June, 2004
Authors B.J. Skromme, L. Chen, M.K. Mikhov, Hisanori Yamane, M. Aoki, F.J. DiSalvo
Keywords Bulk GaN, Cathodoluminescence, Excitation Intensity Dependence, Na/Ga Flux, Photoluminescence (PL), Polarity Dependence, Polytypic Quantum Wells, Stacking Fault
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