Paper Title:
Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults
| Periodical |
Materials Science Forum (Volumes 457 - 460)
|
| Main Theme |
Silicon Carbide and Related Materials 2003
|
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
1613-1616 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.1613 |
| Citation |
B.J. Skromme et al., 2004, Materials Science Forum, 457-460, 1613 |
| Online since |
June, 2004 |
| Authors |
B.J. Skromme, L. Chen, M.K. Mikhov, Hisanori Yamane, M. Aoki, F.J. DiSalvo |
| Keywords |
Bulk GaN, Cathodoluminescence, Excitation Intensity Dependence, Na/Ga Flux, Photoluminescence (PL), Polarity Dependence, Polytypic Quantum Wells, Stacking Fault |
| Price |
US$ 28,- |