Paper Title:
An Ab Initio Study of Intrinsic Stacking Faults in GaN
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1617-1620
DOI
10.4028/www.scientific.net/MSF.457-460.1617
Citation
H. Iwata, S. Öberg, P. R. Briddon, "An Ab Initio Study of Intrinsic Stacking Faults in GaN", Materials Science Forum, Vols. 457-460, pp. 1617-1620, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Zhen Hui Sun, Lan Li Chen, Zhi Hua Xiong
Abstract:We have investigated the magnetic properties, the electronic structure, and the formation energy of wurtzite GaN nanowires (NWs) with gallium...
2160
Authors: Yu Fu Wang
Chapter 27: Semiconductor Materials Manufacturing
Abstract:High power InGaN-based blue LEDs have been commercialized despite the presence of a high dislocation density in the heteroepitaxial...
6897
Authors: En Ling Li, Peng Fei Zhu, Tao Zhao, De Ming Ma, Xue Wen Wang
Abstract:Geometry structure, electronic structure and electronic transport properties of saturated hexagonal single crystalline GaN nanowires in the...
118
Authors: Jamreonta Parinyataramas, Sakuntam Sanorpim, Chanchana Thanachayanont, Hiroyaki Yaguchi, Misao Orihara
Chapter 1: Materials Engineering
Abstract:In this paper, we introduced dbcube topology for Network-on Chips(NoC). We predicted the dbcube topology has high power and low latency...
219