High CW Power 0.3 μm Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
1629-1632 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.1629 |
| Citation |
V. Desmaris et al., 2004, Materials Science Forum, 457-460, 1629 |
| Online since |
June, 2004 |
| Authors |
V. Desmaris, Joakim Eriksson, Niklas Rorsman, Herbert Zirath |
| Keywords |
AlGaN, Galium Nitride (GaN), HEMT, HFET, Power |
| Full Paper |
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