Paper Title:
High CW Power 0.3 μm Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1629-1632
DOI
10.4028/www.scientific.net/MSF.457-460.1629
Citation
V. Desmaris, J. Eriksson, N. Rorsman, H. Zirath, "High CW Power 0.3 μm Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire", Materials Science Forum, Vols. 457-460, pp. 1629-1632, 2004
Online since
June 2004
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