Paper Title:
Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
163-168
DOI
10.4028/www.scientific.net/MSF.457-460.163
Citation
S. Nakamura, T. Kimoto, H. Matsunami, "Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces", Materials Science Forum, Vols. 457-460, pp. 163-168, 2004
Online since
June 2004
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