Self-Aligned N+ Polysilicon-Gate GaN MOSFETs |
| Journal |
Materials Science Forum (Volumes 457 - 460) |
| Volume |
Silicon Carbide and Related Materials 2003 |
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
1633-0 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.1633 |
| Citation |
Kevin Matocha et al., 2004, Materials Science Forum, 457-460, 1633 |
| Online since |
June, 2004 |
| Authors |
Kevin Matocha, T. Paul Chow, Ronald J. Gutmann |
| Keywords |
Gallium Nitride, Ion-Implantation, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Self-Aligned |
| Full Paper |
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