Paper Title:
Self-Aligned N+ Polysilicon-Gate GaN MOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1633-0
DOI
10.4028/www.scientific.net/MSF.457-460.1633
Citation
K. Matocha, T. P. Chow, R. J. Gutmann, "Self-Aligned N+ Polysilicon-Gate GaN MOSFETs", Materials Science Forum, Vols. 457-460, pp. 1633-0, 2004
Online since
June 2004
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