Paper Title:
Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
181-184
DOI
10.4028/www.scientific.net/MSF.457-460.181
Citation
B. Thomas, W. Bartsch, R. A. Stein, R. Schörner, D. Stephani, "Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications", Materials Science Forum, Vols. 457-460, pp. 181-184, 2004
Online since
June 2004
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