Paper Title:
Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
185-188
DOI
10.4028/www.scientific.net/MSF.457-460.185
Citation
C. H. Li, J. Seiler, I. Bhat, T. P. Chow, "Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask", Materials Science Forum, Vols. 457-460, pp. 185-188, 2004
Online since
June 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Yukie Nakano, Takeshi Nomura, Tadashi Takenaka
179
Authors: Kai Zhang, Wei Jun Liu, Xiao Feng Shang
Abstract:Laser additive direct deposition of metals is a new rapid manufacturing technology, which combines with computer aided design, laser...
457
Authors: Tae Bum Kim, Masakazu Tane, Shinsuke Suzuki, Takuya Ide, Hiroshi Utsunomiya, Hideo Nakajima
Abstract:Lotus-type porous aluminum with cylindrical pores oriented in one direction was deformed by Equal Channel Angular Extrusion (ECAE) through a...
263
Authors: Bernd Zippelius, Martin Hauck, Svetlana Beljakowa, Heiko B. Weber, Michael Krieger, Hiroyuki Nagasawa, Hidetsugu Uchida, Gerhard Pensl, Adolf Schöner
Chapter 6: SiC Devices, Circuits and Systems
Abstract:The channel mobility in 3C-SiC n-MOSFETs is investigated by current-voltage and Hall-effect measurements. For comparison, these techniques...
1113
Authors: Jiu Mei Xiao
Chapter 1: Material Science
Abstract:The porous UHMWPE were prepared by wet process and biaxial stretching. The scanning electron microscopy (SEM) experimental results indicated...
332