Paper Title:
Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
189-192
DOI
10.4028/www.scientific.net/MSF.457-460.189
Citation
Y. Chen, T. Kimoto, Y. Takeuchi, R. K. Malhan, H. Matsunami, "Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition", Materials Science Forum, Vols. 457-460, pp. 189-192, 2004
Online since
June 2004
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