Paper Title:
Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
193-196
DOI
10.4028/www.scientific.net/MSF.457-460.193
Citation
C. Hallin, Q. Wahab, I. G. Ivanov, P. Bergman, E. Janzén, "Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD", Materials Science Forum, Vols. 457-460, pp. 193-196, 2004
Online since
June 2004
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