Paper Title:
Growth of Device Quality 4H-SiC High Velocity Epitaxy
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
201-204
DOI
10.4028/www.scientific.net/MSF.457-460.201
Citation
R. Yakimova, M. Syväjärvi, R.R. Ciechonski, Q. Wahab, "Growth of Device Quality 4H-SiC High Velocity Epitaxy", Materials Science Forum, Vols. 457-460, pp. 201-204, 2004
Online since
June 2004
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