Paper Title:
4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
209-212
DOI
10.4028/www.scientific.net/MSF.457-460.209
Citation
K. Kojima, T. Takahashi, Y. Ishida, S. Kuroda, H. Okumura, K. Arai, "4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition", Materials Science Forum, Vols. 457-460, pp. 209-212, 2004
Online since
June 2004
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