Paper Title:
Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
| Periodical |
Materials Science Forum (Volumes 457 - 460)
|
| Main Theme |
Silicon Carbide and Related Materials 2003
|
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
213-216 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.213 |
| Citation |
Yuuki Ishida et al., 2004, Materials Science Forum, 457-460, 213 |
| Online since |
June, 2004 |
| Authors |
Yuuki Ishida, Tetsuo Takahashi, Kazutoshi Kojima, Hajime Okumura, Kazuo Arai, Sadafumi Yoshida |
| Keywords |
C/Si Ratio, Epitaxial Growth, High Rate Growth, Homogeneous Nucleation, Si Condensation, Step Bunching |
| Price |
US$ 28,- |