Paper Title:

Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth

Periodical Materials Science Forum (Volumes 457 - 460)
Main Theme Silicon Carbide and Related Materials 2003
Edited by Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages 213-216
DOI 10.4028/www.scientific.net/MSF.457-460.213
Citation Yuuki Ishida et al., 2004, Materials Science Forum, 457-460, 213
Online since June, 2004
Authors Yuuki Ishida, Tetsuo Takahashi, Kazutoshi Kojima, Hajime Okumura, Kazuo Arai, Sadafumi Yoshida
Keywords C/Si Ratio, Epitaxial Growth, High Rate Growth, Homogeneous Nucleation, Si Condensation, Step Bunching
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