Paper Title:
Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
213-216
DOI
10.4028/www.scientific.net/MSF.457-460.213
Citation
Y. Ishida, T. Takahashi, K. Kojima, H. Okumura, K. Arai, S. Yoshida, "Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth ", Materials Science Forum, Vols. 457-460, pp. 213-216, 2004
Online since
June 2004
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