Paper Title:

Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems

Periodical Materials Science Forum (Volumes 457 - 460)
Main Theme Silicon Carbide and Related Materials 2003
Edited by Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages 217-220
DOI 10.4028/www.scientific.net/MSF.457-460.217
Citation C. Sartel et al., 2004, Materials Science Forum, 457-460, 217
Online since June, 2004
Authors C. Sartel, Carole Balloud, Veronique Soulière, Sandrine Juillaguet, Jacques Dazord, Yves Monteil, Jean Camassel, S. Rushworth
Keywords 4H-SiC, Chemical Vapor Deposition (CVD), Growth Rate, HexaMethylDisilane, Operating Windows, Silane
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