Paper Title:
Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems
| Periodical |
Materials Science Forum (Volumes 457 - 460)
|
| Main Theme |
Silicon Carbide and Related Materials 2003
|
| Edited by |
Roland Madar, Jean Camassel and Elisabeth Blanquet |
| Pages |
217-220 |
| DOI |
10.4028/www.scientific.net/MSF.457-460.217 |
| Citation |
C. Sartel et al., 2004, Materials Science Forum, 457-460, 217 |
| Online since |
June, 2004 |
| Authors |
C. Sartel, Carole Balloud, Veronique Soulière, Sandrine Juillaguet, Jacques Dazord, Yves Monteil, Jean Camassel, S. Rushworth |
| Keywords |
4H-SiC, Chemical Vapor Deposition (CVD), Growth Rate, HexaMethylDisilane, Operating Windows, Silane |
| Price |
US$ 28,- |