Paper Title:
Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
221-224
DOI
10.4028/www.scientific.net/MSF.457-460.221
Citation
S.M. Bishop, E. A. Preble, C. Hallin, A. Henry, L. Storasta, H. Jacobsson, B.P. Wagner, Z.J. Reitmeier, E. Janzén, R. F. Davis, "Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization ", Materials Science Forum, Vols. 457-460, pp. 221-224, 2004
Online since
June 2004
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