Paper Title:
Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
225-228
DOI
10.4028/www.scientific.net/MSF.457-460.225
Citation
S. Harada, K. Nakayama, M. Sasaki, H. Shiomi, "Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation", Materials Science Forum, Vols. 457-460, pp. 225-228, 2004
Online since
June 2004
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Price
$32.00
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